Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Pierre Blanc; Martin Hiess; Carlo Colombo; Anna Dalmau Mallorqui; Tina S. Safaei; Peter Krogstrup; Jesper Nygård; AFI Fontcuberta

doi:10.1504/IJNT.2013.053513

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Pierre Blanc, Martin Hiess, Carlo Colombo, Anna Dalmau Mallorqui, Tina S. Safaei, Peter Krogstrup, Jesper Nygård, AFI Fontcuberta

Condensed Matter Physics

8 Citations (Scopus)

Abstract

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire-based radial GaAs p-i-n junction. Current-voltage characteristics are shown, along with scanning photocurrent mapping.

Original language	English
Journal	International Journal of Nanotechnology
Volume	10
Issue number	5-7
Pages (from-to)	419-432
ISSN	1475-7435
DOIs	https://doi.org/10.1504/IJNT.2013.053513
Publication status	Published - 1 Jan 2013

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Blanc, P., Hiess, M., Colombo, C., Mallorqui, A. D., Safaei, T. S., Krogstrup, P., Nygård, J., & Fontcuberta, AFI. (2013). Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction. International Journal of Nanotechnology, 10(5-7), 419-432. https://doi.org/10.1504/IJNT.2013.053513

Electrical contacts to single nanowires : a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction. / Blanc, Pierre; Hiess, Martin; Colombo, Carlo et al.

In: International Journal of Nanotechnology, Vol. 10, No. 5-7, 01.01.2013, p. 419-432.

Research output: Contribution to journal › Journal article › Research › peer-review

Blanc, P, Hiess, M, Colombo, C, Mallorqui, AD, Safaei, TS, Krogstrup, P , Nygård, J & Fontcuberta, AFI 2013, 'Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction', International Journal of Nanotechnology, vol. 10, no. 5-7, pp. 419-432. https://doi.org/10.1504/IJNT.2013.053513

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AB - Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire-based radial GaAs p-i-n junction. Current-voltage characteristics are shown, along with scanning photocurrent mapping.

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Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

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