Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

TY - JOUR

T1 - Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

AU - Casadei, Alberto

AU - Krogstrup, Peter

AU - Heiss, Martin

AU - Röhr, Jason A.

AU - Colombo, Carlo

AU - Ruelle, Thibaud

AU - Upadhyay, Shivendra

AU - Sørensen, Claus Birger

AU - Nygård, Jesper

AU - Morral, Anna Fontcuberta i

PY - 2013/1/7

Y1 - 2013/1/7

N2 - The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also show that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires.

AB - The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also show that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires.

U2 - 10.1063/1.4772020

DO - 10.1063/1.4772020

M3 - Journal article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013117

ER -