Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires

TY - JOUR

T1 - Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires

AU - Venkatesan, Sriram

AU - Madsen, Morten Hannibal

AU - Schmid, Herbert

AU - Krogstrup, Peter

AU - Johnson, Erik

AU - Scheu, Christina

PY - 2013/8/5

Y1 - 2013/8/5

N2 - Straight, axial InAs nanowire with multiple segments of Ga xIn1-xAs was grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveals the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the Ga xIn1-xAs/InAs interfaces and a higher Ga concentration for the early grown GaxIn1-xAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

AB - Straight, axial InAs nanowire with multiple segments of Ga xIn1-xAs was grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveals the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the Ga xIn1-xAs/InAs interfaces and a higher Ga concentration for the early grown GaxIn1-xAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

M3 - Journal article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063106

ER -