Coulomb Oscillations in Antidots in the Integer and Fractional Quantum Hall Regimes

TY - JOUR

T1 - Coulomb Oscillations in Antidots in the Integer and Fractional Quantum Hall Regimes

AU - Kou, A.

AU - Marcus, Charles M.

AU - Pfieffer, L.N.

AU - West, K.W.

PY - 2012/6/19

Y1 - 2012/6/19

N2 - We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor ν=2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at ν=2/3 a tunneling charge of (2/3)e and a single charged edge.

AB - We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor ν=2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at ν=2/3 a tunneling charge of (2/3)e and a single charged edge.

U2 - 10.1103/PhysRevLett.108.256803

DO - 10.1103/PhysRevLett.108.256803

M3 - Journal article

C2 - 23004632

SN - 0031-9007

VL - 108

SP - 256803

JO - Physical Review Letters

JF - Physical Review Letters

IS - 25

ER -