No photo of Peter Krogstrup Jeppesen
20092019

Research activity per year

Network

Esther Alarcon-Llado

  • Swiss Federal Institute of Technology Lausanne
  • AMOLF

External person

Anna Fontcuberta i Morral

  • Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne

External person

Roman M. Lutchyn

  • University of California, Santa Barbara

External person

John D. Watson

  • Ontario Institute for Cancer Research

External person

Christina Scheu

  • Ludwig Maximilian University of Munich

External person

Dmitry, I Pikulin

  • University of California, Santa Barbara

External person

Sriram Venkatesan

  • Ludwig Maximilian University of Munich

External person

Stephan Daniel Bouman

  • Novo Nordisk A/S (Biz)

External person

Anna Fontcuberta i Morral

  • Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland
  • Swiss Federal Institute of Technology Lausanne

External person

Herbert Schmid

  • NM-Leibniz Institute for New Materials, 66123 Saarbrücken, Germany

External person

B. E. Helt

  • Niels Bohr Institutet

External person

C. Colombo

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

External person

Rok Zitko

  • Jožef Stefan Institute

External person

K.C.Y. Huang

  • Stanford University

External person

Mark L. Brongersma

  • Stanford University

External person

Martin Heiss

  • Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland

External person

Hao Zhang

  • Lancaster University
  • South China Agricultural University

External person

S. Curiotto

  • RISØ DTU. Materials Research Department, Roskilde

External person

Pierre Blanc

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

External person

H. Bruntt

  • Observatoire de Paris, LESIA, 5 Place Jules Janssen, 95195 Meudon, France,Sydney Institute for Astronomy, School of Physics, University of Sydney, NSW 2006, Australia

External person

Anna Dalmau Mallorqui

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

External person

Leonid I. Glazman

  • Unvi. Minnesota
  • Yale University

External person

Candice Thomas

  • University of Purdue

External person

Geoffrey C. Gardner

  • University of Purdue

External person

Maja C. Cassidy

  • Harvard University

External person

S. Frandsen

  • Institut for Fysik og Astronomi, AU

External person

Martin Hiess

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

External person

Christina Scheu

  • Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German

External person

A.P. Micolich

  • School of Physics, University of New South Wales, Sydney, New South Wales 2052

External person

M. Heiss

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

External person

Huiyun Liu

  • Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

External person

Carlo Colombo

  • Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne

External person

Elisabetta Maria Fiordaliso

  • Danmarks Tekniske Universitet

External person

Tian Wang

  • Nanjing Agricultural University

External person

AFI Fontcuberta

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

External person

Michael J. Manfra

  • University of Purdue

External person

E. H. Olsen

  • Niels Bohr Institutet

External person

A.F. i Morral

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

External person

Erika Mühlbauer

  • Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German

External person

Pengyu Fan

  • Stanford University

External person

Aske Nørskov Gejl

  • Kemisk Institut, Københavns Universitet

External person

Oliver Demichel

  • Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland

External person

D. Juncher

  • Niels Bohr Institutet

External person

Jun Yamasaki

  • EcoTopia Science Institute, Department of Quantum Engineering, Nagoya University, 464-8603, Japan

External person

A. Geresdi

  • Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

External person

T. Ruelle

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

External person

Carlo Colombo

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

External person

Tina S. Safaei

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

External person

A. Gasadei

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

External person

Sriam Venkatesan

  • Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German

External person