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The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires
Lunjie Zeng,
Thomas Kanne
,
Jesper Nygard
,
Peter Krogstrup
, Wolfgang Jaeger, Eva Olsson
Faststoffysik
5
Citationer (Scopus)
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Keyphrases
Band Shift
20%
Bending Deformation
100%
Charge Carrier Transport
20%
Electron Effective Mass
100%
In Situ Electron Microscopy
20%
P-type Doping
100%
Semiconductor Nanomaterials
20%
Strain Band
20%
Strain Change
20%
Strain Engineering
20%
Transport Effective Mass
100%
Engineering
Bending Deformation
100%
Doped Gaas
100%
Electron Effective Mass
100%
Engineering Strain
12%
Mechanical Strain
12%
Material Science
Carrier Transport
12%
Charge Carrier
12%
Crystal Structure
12%
Electron Energy Loss Spectrometry
12%
Electron Microscopy
12%
Energy Level
12%
Gallium Arsenide
100%
Nanostructured Material
12%
Nanowire
100%