Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction

Simon Oddsson Mariager, Søren Lauridsen, Claus Birger Sørensen, Asmus Dohn, Phillip R. Willmott, Jesper Nygård, Robert Krarup Feidenhans'l

11 Citationer (Scopus)

Abstract

GaAs nanowires were grown by molecular beam epitaxy and studied by glancing-angle x-ray diffraction during five different stages of the growth process. An entire forest of randomly positioned epitaxial nanowires was sampled simultaneously and a large variation in the Au-Ga catalyst was found. Au, AuGa, AuGa2 and the hexagonal β phase were all identified in several orientations and in similar amounts. The nanowires are shown to consist of regular zinc blende crystal, its twin and the hexagonal wurtzite. The evolution of the various Au-Ga catalysts and the development in the twin to the wurtzite abundance ratio indicate that the Au catalyst is saturated upon initiation of growth leading to an increased amount of wurtzite structure in the wires. A specular x-ray scan identifies the various Au-Ga alloys, three Au lattice constants and a rough interface between nanowires and catalyst. Reciprocal space maps were obtained around Au Bragg points and show the development of the Au catalyst from a distribution largely oriented with respect to the lattice to a non-uniform distribution with several well-defined lattice constants.

OriginalsprogEngelsk
TidsskriftNanotechnology
Vol/bind21
Udgave nummer11
Sider (fra-til)115603
Antal sider7
ISSN0957-4484
DOI
StatusUdgivet - 19 mar. 2010

Fingeraftryk

Dyk ned i forskningsemnerne om 'Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction'. Sammen danner de et unikt fingeraftryk.

Citationsformater