rf-electrometer using a carbon nanotube resonant tunneling transistor

L. G. Lechner; Fan  Wu; R. Danneau; P. Hakonen; Søren Erfurt Sass Andresen

doi:10.1063/1.3387927

rf-electrometer using a carbon nanotube resonant tunneling transistor

L. G. Lechner, Fan Wu, R. Danneau, P. Hakonen, Søren Erfurt Sass Andresen

1 Citationer (Scopus)

Abstract

We have studied resonant tunneling transistors (RTT) made of single-walled carbon nanotube quantum dots in the Fabry-Ṕrot regime. We show sensitivity to input charge as high as 5× 10^-6e/ Hz ^1/2 with a carrier frequency of 719 MHz at 4.2 K. This result is comparable to the best values of charge sensitivity so far reported for radio frequency single electron transistors (rf-SET). Unlike SETs, whose operating temperature is limited as Coulomb blockade vanishes as 1/T, a RTT can operate at higher temperatures, since the dephasing length l_φ 1/ T ^2/3.

Originalsprog	Engelsk
Tidsskrift	Journal of Applied Physics
Vol/bind	107
Udgave nummer	8
Sider (fra-til)	084316
Antal sider	3
ISSN	0021-8979
DOI	https://doi.org/10.1063/1.3387927
Status	Udgivet - 15 apr. 2010

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10.1063/1.3387927

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title = "rf-electrometer using a carbon nanotube resonant tunneling transistor",

abstract = "We have studied resonant tunneling transistors (RTT) made of single-walled carbon nanotube quantum dots in the Fabry-Ṕrot regime. We show sensitivity to input charge as high as 5× 10-6e/ Hz 1/2 with a carrier frequency of 719 MHz at 4.2 K. This result is comparable to the best values of charge sensitivity so far reported for radio frequency single electron transistors (rf-SET). Unlike SETs, whose operating temperature is limited as Coulomb blockade vanishes as 1/T, a RTT can operate at higher temperatures, since the dephasing length lφ 1/ T 2/3.",

author = "Lechner, {L. G.} and Fan Wu and R. Danneau and P. Hakonen and Andresen, {S{\o}ren Erfurt Sass}",

year = "2010",

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doi = "10.1063/1.3387927",

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TY - JOUR

T1 - rf-electrometer using a carbon nanotube resonant tunneling transistor

AU - Lechner, L. G.

AU - Wu, Fan

AU - Danneau, R.

AU - Hakonen, P.

AU - Andresen, Søren Erfurt Sass

PY - 2010/4/15

Y1 - 2010/4/15

N2 - We have studied resonant tunneling transistors (RTT) made of single-walled carbon nanotube quantum dots in the Fabry-Ṕrot regime. We show sensitivity to input charge as high as 5× 10-6e/ Hz 1/2 with a carrier frequency of 719 MHz at 4.2 K. This result is comparable to the best values of charge sensitivity so far reported for radio frequency single electron transistors (rf-SET). Unlike SETs, whose operating temperature is limited as Coulomb blockade vanishes as 1/T, a RTT can operate at higher temperatures, since the dephasing length lφ 1/ T 2/3.

AB - We have studied resonant tunneling transistors (RTT) made of single-walled carbon nanotube quantum dots in the Fabry-Ṕrot regime. We show sensitivity to input charge as high as 5× 10-6e/ Hz 1/2 with a carrier frequency of 719 MHz at 4.2 K. This result is comparable to the best values of charge sensitivity so far reported for radio frequency single electron transistors (rf-SET). Unlike SETs, whose operating temperature is limited as Coulomb blockade vanishes as 1/T, a RTT can operate at higher temperatures, since the dephasing length lφ 1/ T 2/3.

U2 - 10.1063/1.3387927

DO - 10.1063/1.3387927

M3 - Journal article

SN - 0021-8979

VL - 107

SP - 084316

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

rf-electrometer using a carbon nanotube resonant tunneling transistor

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