Metal-nanoparticle single-electron transistors fabricated using electromigration

TY - JOUR

T1 - Metal-nanoparticle single-electron transistors fabricated using electromigration

AU - Bolotin, K I

AU - Kuemmeth, Ferdinand

AU - Pasupathy, A N

AU - Ralph, D C

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5–15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied.

AB - We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5–15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied.

U2 - 10.1063/1.1695203

DO - 10.1063/1.1695203

M3 - Journal article

SN - 0003-6951

VL - 84

SP - 3154

EP - 3156

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -