Interaction-induced negative differential resistance in asymmetric molecular junctions

Martin Christian Leijnse, W. Sun, Mogens Brøndsted Nielsen, Per Hedegård, Karsten Flensberg

22 Citationer (Scopus)

Abstract

Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from an interplay of orbital spatial asymmetry and strong electron-electron interaction, which causes the molecule to become trapped in a nonconducting state above a voltage threshold. We show how the desired asymmetry can be selectively introduced in individual orbitals in, e.g., oligo(phenyleneethynylene)-type molecules by functionalization with a suitable side group, which is in linear conjugation to one end of the molecule and cross-conjugated to the other end.

OriginalsprogEngelsk
TidsskriftJournal of Chemical Physics
Vol/bind134
Udgave nummer10
Sider (fra-til)104107/1-7
ISSN0021-9606
StatusUdgivet - 14 mar. 2011

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