High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Zhuoying Chen; Mi Jung Lee; Raja Shahid Ashraf; Yun Gu; Sebastian Albert-Seifried; Martin Meedom Nielsen; Bob Schroeder; Thomas D. Anthopoulos; Martin Heeney; Iain McCulloch; Henning Sirringhaus

doi:10.1002/adma.201102786

High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Zhuoying Chen, Mi Jung Lee, Raja Shahid Ashraf, Yun Gu, Sebastian Albert-Seifried, Martin Meedom Nielsen, Bob Schroeder, Thomas D. Anthopoulos, Martin Heeney, Iain McCulloch, Henning Sirringhaus

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479 Citationer (Scopus)

Abstract

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm ² V ^-1 s ^-1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

Originalsprog	Engelsk
Tidsskrift	Advanced Materials
Vol/bind	24
Udgave nummer	5
Sider (fra-til)	647-652
Antal sider	6
ISSN	0935-9648
DOI	https://doi.org/10.1002/adma.201102786
Status	Udgivet - 2 feb. 2012

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10.1002/adma.201102786

Citationsformater

Chen, Z., Lee, M. J., Ashraf, R. S., Gu, Y., Albert-Seifried, S., Nielsen, M. M., Schroeder, B., Anthopoulos, T. D., Heeney, M., McCulloch, I., & Sirringhaus, H. (2012). High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities. Advanced Materials, 24(5), 647-652. https://doi.org/10.1002/adma.201102786

Chen, Z, Lee, MJ, Ashraf, RS, Gu, Y, Albert-Seifried, S, Nielsen, MM, Schroeder, B, Anthopoulos, TD, Heeney, M, McCulloch, I & Sirringhaus, H 2012, 'High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities', Advanced Materials, bind 24, nr. 5, s. 647-652. https://doi.org/10.1002/adma.201102786

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abstract = "Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.",

author = "Zhuoying Chen and Lee, {Mi Jung} and Ashraf, {Raja Shahid} and Yun Gu and Sebastian Albert-Seifried and Nielsen, {Martin Meedom} and Bob Schroeder and Anthopoulos, {Thomas D.} and Martin Heeney and Iain McCulloch and Henning Sirringhaus",

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doi = "10.1002/adma.201102786",

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AU - Chen, Zhuoying

AU - Lee, Mi Jung

AU - Ashraf, Raja Shahid

AU - Gu, Yun

AU - Albert-Seifried, Sebastian

AU - Nielsen, Martin Meedom

AU - Schroeder, Bob

AU - Anthopoulos, Thomas D.

AU - Heeney, Martin

AU - McCulloch, Iain

AU - Sirringhaus, Henning

PY - 2012/2/2

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N2 - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

AB - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

U2 - 10.1002/adma.201102786

DO - 10.1002/adma.201102786

M3 - Journal article

C2 - 21997483

SN - 0935-9648

VL - 24

SP - 647

EP - 652

JO - Advanced Materials

JF - Advanced Materials

IS - 5

ER -

High-performance ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Abstract

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