Field dependence of relaxation rates in 3He-plus-substrate systems

Field dependence of relaxation rates in ³He-plus-substrate systems

4 Citationer (Scopus)

Originalsprog	Engelsk
Tidsskrift	Japanese Journal of Applied Physics
Vol/bind	26
Udgave nummer	3, Part 1
Sider (fra-til)	329-330
Antal sider	2
DOI	https://doi.org/10.7567/JJAPS.26S3.329
Status	Udgivet - 1 jan. 1987

@article{46af8cfd45604252bb281d4136888ff6,

title = "Field dependence of relaxation rates in 3He-plus-substrate systems",

keywords = "Faculty of Science, Helium-3, NMR",

author = "Q Geng and Malte Olsen and Rasmussen, {Finn Berg}",

year = "1987",

month = jan,

day = "1",

doi = "10.7567/JJAPS.26S3.329",

language = "English",

volume = "26",

pages = "329--330",

journal = "Japanese Journal of Applied Physics",

publisher = "Institute of Physics Publishing Ltd",

number = "3, Part 1",

}

TY - JOUR

T1 - Field dependence of relaxation rates in 3He-plus-substrate systems

AU - Geng, Q

AU - Olsen, Malte

AU - Rasmussen, Finn Berg

PY - 1987/1/1

Y1 - 1987/1/1

KW - Faculty of Science

KW - Helium-3

KW - NMR

U2 - 10.7567/JJAPS.26S3.329

DO - 10.7567/JJAPS.26S3.329

M3 - Journal article

VL - 26

SP - 329

EP - 330

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3, Part 1

ER -