Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

TY - JOUR

T1 - Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

AU - Bolotin, Kirill

AU - Kuemmeth, Ferdinand

AU - Ralph, D

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

AB - We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

U2 - 10.1103/PhysRevLett.97.127202

DO - 10.1103/PhysRevLett.97.127202

M3 - Journal article

C2 - 17025993

SN - 0031-9007

VL - 97

SP - 127202

JO - Physical Review Letters

JF - Physical Review Letters

IS - 12

ER -