AlGaAs/GaAs single electron transistor fabricated without modulation doping

TY - JOUR

T1 - AlGaAs/GaAs single electron transistor fabricated without modulation doping

AU - See , A.M.

AU - Klochan , O.

AU - Micolich, A.P.

AU - Aagesen, Martin

AU - Lindelof, Poul Erik

PY - 2010/3/19

Y1 - 2010/3/19

N2 - We have fabricated a quantum dot single electron transistor, based on AlGaAs/GaAs heterojunction without modulation doping, which exhibits clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak line shape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved.

AB - We have fabricated a quantum dot single electron transistor, based on AlGaAs/GaAs heterojunction without modulation doping, which exhibits clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak line shape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved.

U2 - 10.1063/1.3358388

DO - 10.1063/1.3358388

M3 - Journal article

SN - 0003-6951

VL - 96

SP - 112104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -