Air-stable pi-conjugated amorphous copolymer field-effect transistors with high mobility of 0.3 cm(2)/Vs

TY - JOUR

T1 - Air-stable pi-conjugated amorphous copolymer field-effect transistors with high mobility of 0.3 cm(2)/Vs

AU - Georgakopoulos, S.

AU - Sparrowe, D.

AU - Gu, Yun

AU - Nielsen, Martin Meedom

AU - Meyer, F.

AU - Shkunov, M.

PY - 2012/11/19

Y1 - 2012/11/19

N2 - We have fabricated organic bottom-contact top-gate field-effect transistors with an indenofluorene-phenanthrene co-polymer semiconductor, exhibiting ON/OFF ratio of 107 and uncommonly high mobility for an amorphous conjugated polymer of up to 0.3 cm2/Vs. Lack of crystallinity in this material is indicated by atomic force microscopy, grazing incidence wide angle X-ray scattering, and differential scanning calorimetry data. Nevertheless, fitting transistor data to the Gaussian disorder model gives low energetic disorder of σ = 48 meV and high prefactor mobility μ0 = 0.67 cm2/Vs. The measured transistor mobility is also exceptionally stable in ambient conditions, decreasing only by approximately 15 over two months.

AB - We have fabricated organic bottom-contact top-gate field-effect transistors with an indenofluorene-phenanthrene co-polymer semiconductor, exhibiting ON/OFF ratio of 107 and uncommonly high mobility for an amorphous conjugated polymer of up to 0.3 cm2/Vs. Lack of crystallinity in this material is indicated by atomic force microscopy, grazing incidence wide angle X-ray scattering, and differential scanning calorimetry data. Nevertheless, fitting transistor data to the Gaussian disorder model gives low energetic disorder of σ = 48 meV and high prefactor mobility μ0 = 0.67 cm2/Vs. The measured transistor mobility is also exceptionally stable in ambient conditions, decreasing only by approximately 15 over two months.

U2 - 10.1063/1.4767921

DO - 10.1063/1.4767921

M3 - Journal article

SN - 0003-6951

VL - 101

SP - 213305

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -