Advances in the theory of III–V nanowire growth dynamics

Peter Krogstrup; Henrik Ingerslev Jørgensen; Erik Johnson; Morten Hannibal Madsen; Claus Birger Sørensen; A.F. i Morral; Martin Aagesen; Jesper Nygård; Frank Glas

doi:10.1088/0022-3727/46/31/313001

Advances in the theory of III–V nanowire growth dynamics

Peter Krogstrup, Henrik Ingerslev Jørgensen, Erik Johnson, Morten Hannibal Madsen, Claus Birger Sørensen, A.F. i Morral, Martin Aagesen, Jesper Nygård, Frank Glas

89 Citationer (Scopus)

Abstract

Nanowire (NW) crystal growth via the vapour-liquid-solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III-V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

Originalsprog	Engelsk
Artikelnummer	313001
Tidsskrift	Journal of Physics D: Applied Physics
Vol/bind	46
Udgave nummer	31
ISSN	0022-3727
DOI	https://doi.org/10.1088/0022-3727/46/31/313001
Status	Udgivet - 7 aug. 2013

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10.1088/0022-3727/46/31/313001

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@article{fa46dda489fe41ff98752e18b655a730,

title = "Advances in the theory of III–V nanowire growth dynamics",

abstract = "Nanowire (NW) crystal growth via the vapour-liquid-solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III-V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.",

author = "Peter Krogstrup and J{\o}rgensen, {Henrik Ingerslev} and Erik Johnson and Madsen, {Morten Hannibal} and S{\o}rensen, {Claus Birger} and {i Morral}, A.F. and Martin Aagesen and Jesper Nyg{\aa}rd and Frank Glas",

year = "2013",

month = aug,

day = "7",

doi = "10.1088/0022-3727/46/31/313001",

language = "English",

volume = "46",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics Publishing Ltd",

number = "31",

}

TY - JOUR

T1 - Advances in the theory of III–V nanowire growth dynamics

AU - Krogstrup, Peter

AU - Jørgensen, Henrik Ingerslev

AU - Johnson, Erik

AU - Madsen, Morten Hannibal

AU - Sørensen, Claus Birger

AU - i Morral, A.F.

AU - Aagesen, Martin

AU - Nygård, Jesper

AU - Glas, Frank

PY - 2013/8/7

Y1 - 2013/8/7

N2 - Nanowire (NW) crystal growth via the vapour-liquid-solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III-V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

AB - Nanowire (NW) crystal growth via the vapour-liquid-solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III-V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

U2 - 10.1088/0022-3727/46/31/313001

DO - 10.1088/0022-3727/46/31/313001

M3 - Journal article

SN - 0022-3727

VL - 46

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 31

M1 - 313001

ER -

Advances in the theory of III–V nanowire growth dynamics

Abstract

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