A Semiconductor Nanowire-Based Superconducting Qubit

Thorvald Wadum Larsen; Karl David Petersson; Ferdinand Kuemmeth; Thomas Sand Jespersen; Peter Krogstrup; Jesper Nygård; Charles M. Marcus

doi:10.1103/PhysRevLett.115.127001

A Semiconductor Nanowire-Based Superconducting Qubit

Thorvald Wadum Larsen, Karl David Petersson, Ferdinand Kuemmeth, Thomas Sand Jespersen, Peter Krogstrup, Jesper Nygård, Charles M. Marcus

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151 Citationer (Scopus)

Abstract

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (∼0.8μs) and dephasing times (∼1μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

Originalsprog	Engelsk
Artikelnummer	127001
Tidsskrift	Physical Review Letters
Vol/bind	115
ISSN	0031-9007
DOI	https://doi.org/10.1103/PhysRevLett.115.127001
Status	Udgivet - 14 sep. 2015

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10.1103/PhysRevLett.115.127001

PhysRevLett.115.127001Forlagets udgivne version, 1,03 MB

Citationsformater

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AU - Larsen, Thorvald Wadum

AU - Petersson, Karl David

AU - Kuemmeth, Ferdinand

AU - Jespersen, Thomas Sand

AU - Krogstrup, Peter

AU - Nygård, Jesper

AU - Marcus, Charles M.

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N2 - We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (∼0.8μs) and dephasing times (∼1μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

AB - We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (∼0.8μs) and dephasing times (∼1μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

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DO - 10.1103/PhysRevLett.115.127001

M3 - Journal article

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SN - 0031-9007

VL - 115

JO - Physical Review Letters

JF - Physical Review Letters

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A Semiconductor Nanowire-Based Superconducting Qubit

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