A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Y.Z. Chen; Nicolas Emile Bovet; F. Trier; D.V. Christensen; F.M. Qu; N.H. Andersen; Takeshi Kasama; W. Zhang; R. Giraud; J. Dufouleur; Thomas Sand Jespersen; J.R. Sun; A. Smith; Jesper Nygård; L. Lu; B. Büchner; B.G. Shen; Sidse Annett Linderoth; Nini Pryds

doi:10.1038/ncomms2394

A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Y.Z. Chen, Nicolas Emile Bovet, F. Trier, D.V. Christensen, F.M. Qu, N.H. Andersen, Takeshi Kasama, W. Zhang, R. Giraud, J. Dufouleur, Thomas Sand Jespersen, J.R. Sun, A. Smith, Jesper Nygård, L. Lu, B. Büchner, B.G. Shen, Sidse Annett Linderoth, Nini Pryds

220 Citationer (Scopus)

Abstract

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

Originalsprog	Engelsk
Artikelnummer	1371
Tidsskrift	Nature Communications
Vol/bind	4
Antal sider	6
ISSN	2041-1723
DOI	https://doi.org/10.1038/ncomms2394
Status	Udgivet - 2013

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10.1038/ncomms2394

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Chen, Y. Z., Bovet, N. E., Trier, F., Christensen, D. V., Qu, F. M., Andersen, N. H., Kasama, T., Zhang, W., Giraud, R., Dufouleur, J., Jespersen, T. S., Sun, J. R., Smith, A., Nygård, J., Lu, L., Büchner, B., Shen, B. G., Linderoth, S. A., & Pryds, N. (2013). A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3. Nature Communications, 4, [1371]. https://doi.org/10.1038/ncomms2394

Chen, YZ, Bovet, NE, Trier, F, Christensen, DV, Qu, FM, Andersen, NH, Kasama, T, Zhang, W, Giraud, R, Dufouleur, J, Jespersen, TS, Sun, JR, Smith, A, Nygård, J, Lu, L, Büchner, B, Shen, BG, Linderoth, SA & Pryds, N 2013, 'A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3', Nature Communications, bind 4, 1371. https://doi.org/10.1038/ncomms2394

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title = "A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3",

abstract = "The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.",

author = "Y.Z. Chen and Bovet, {Nicolas Emile} and F. Trier and D.V. Christensen and F.M. Qu and N.H. Andersen and Takeshi Kasama and W. Zhang and R. Giraud and J. Dufouleur and Jespersen, {Thomas Sand} and J.R. Sun and A. Smith and Jesper Nyg{\aa}rd and L. Lu and B. B{\"u}chner and B.G. Shen and Linderoth, {Sidse Annett} and Nini Pryds",

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AU - Chen, Y.Z.

AU - Bovet, Nicolas Emile

AU - Trier, F.

AU - Christensen, D.V.

AU - Qu, F.M.

AU - Andersen, N.H.

AU - Kasama, Takeshi

AU - Zhang, W.

AU - Giraud, R.

AU - Dufouleur, J.

AU - Jespersen, Thomas Sand

AU - Sun, J.R.

AU - Smith, A.

AU - Nygård, Jesper

AU - Lu, L.

AU - Büchner, B.

AU - Shen, B.G.

AU - Linderoth, Sidse Annett

AU - Pryds, Nini

PY - 2013

Y1 - 2013

N2 - The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

AB - The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

U2 - 10.1038/ncomms2394

DO - 10.1038/ncomms2394

M3 - Journal article

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JO - Nature Communications

JF - Nature Communications

M1 - 1371

ER -

A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

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