Three-fold Symmetric Doping Mechanism in GaAs Nanowires

M. H. T. Dastjerdi, Elisabetta Maria Fiordaliso, E. D. Leshchenko, A. Akhtari-Zavareh, T. Kasama, M. Aagesen, V. G. Dubrovskii, R. R. LaPierre

22 Citations (Scopus)
Original languageEnglish
JournalNano Letters
Volume17
Issue number10
Pages (from-to)5875-5882
ISSN1530-6984
DOIs
Publication statusPublished - 11 Oct 2017

Keywords

  • GaAs
  • gallium arsenide
  • nanowires
  • self-assisted
  • molecular beam epitaxy
  • doping
  • beryllium

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