Photoresponsive and gas sensing field-effect transistors based on multilayer WS2 nanoflakes

Nengjie Huo, Shengxue Yang, Zhongming Wei, Shu-Shen Li, Jian-Bai Xia, Jingbo Li

289 Citations (Scopus)

Abstract

The photoelectrical properties of multilayer WS 2 nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm2/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (R) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS 2 nanoflakes and the physical-adsorbed gas molecules, greatly influencing the photoelectrical properties of our devices. The ethanol and NH 3 molecules can serve as electron donors to enhance the R and EQE significantly. Under the NH 3 atmosphere, the maximum R and EQE can even reach 884 A/W and 1.7 × 10 5 %, respectively. This work demonstrates that multilayer WS 2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS 2-based optoelectronics.

Original languageUndefined/Unknown
Article number5209
JournalScientific Reports
Volume4
Number of pages9
ISSN2045-2322
DOIs
Publication statusPublished - 9 Jun 2014

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