Novel and enhanced optoelectronic performances of multilayer MoS2-WS2 heterostructure transistors

Nengjie Huo; Jun Kang; Zhongming Wei; Shu-Shen Li; Jingbo Li; Su-Huai Wei

doi:10.1002/adfm.201401504

Novel and enhanced optoelectronic performances of multilayer MoS₂-WS₂ heterostructure transistors

Nengjie Huo, Jun Kang, Zhongming Wei, Shu-Shen Li, Jingbo Li, Su-Huai Wei

Department of Chemistry

279 Citations (Scopus)

Original language	English
Journal	Advanced Functional Materials
Volume	24
Issue number	44
Pages (from-to)	7025-7031
Number of pages	7
ISSN	1616-301X
DOIs	https://doi.org/10.1002/adfm.201401504
Publication status	Published - 5 Nov 2014

Keywords

MoS2-WS2 heterostructures
optoelectronic performances
rectification
bipolarity

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/adfm.201401504

Cite this

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title = "Novel and enhanced optoelectronic performances of multilayer MoS2-WS2 heterostructure transistors",

keywords = "MoS2-WS2 heterostructures, optoelectronic performances, rectification, bipolarity",

author = "Nengjie Huo and Jun Kang and Zhongming Wei and Shu-Shen Li and Jingbo Li and Su-Huai Wei",

year = "2014",

month = nov,

day = "5",

doi = "10.1002/adfm.201401504",

language = "English",

volume = "24",

pages = "7025--7031",

journal = "Advanced Functional Materials",

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TY - JOUR

T1 - Novel and enhanced optoelectronic performances of multilayer MoS2-WS2 heterostructure transistors

AU - Huo, Nengjie

AU - Kang, Jun

AU - Wei, Zhongming

AU - Li, Shu-Shen

AU - Li, Jingbo

AU - Wei, Su-Huai

PY - 2014/11/5

Y1 - 2014/11/5

KW - MoS2-WS2 heterostructures

KW - optoelectronic performances

KW - rectification

KW - bipolarity

U2 - 10.1002/adfm.201401504

DO - 10.1002/adfm.201401504

M3 - Journal article

SN - 1616-301X

VL - 24

SP - 7025

EP - 7031

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 44

ER -

Novel and enhanced optoelectronic performances of multilayer MoS2-WS2 heterostructure transistors

Keywords

UN SDGs

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Cite this

Novel and enhanced optoelectronic performances of multilayer MoS₂-WS₂ heterostructure transistors