Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Yunzhong Chen*, Felix Trier, Takeshi Kasama, Dennis V. Christensen, Nicolas Emile Bovet, Zoltan I. Balogh, Han Li, Karl Tor Sune Thydén, Wei Zhang, Sadegh Yazdi, Poul Norby, Nini Pryds, Søren Linderoth

*Corresponding author for this work
70 Citations (Scopus)

Abstract

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp and exhibits a high electron mobility exceeding 60 000 cm2 V-1 s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.

Original languageEnglish
JournalNano Letters
Volume15
Issue number3
Pages (from-to)1849-1854
Number of pages6
ISSN1530-6984
DOIs
Publication statusPublished - 2015

Keywords

  • Complex oxide interfaces
  • oxide electronics
  • strain induced polarization
  • two-dimensional electron gases

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