Three-fold Symmetric Doping Mechanism in GaAs Nanowires

M. H. T. Dastjerdi; Elisabetta Maria Fiordaliso; E. D. Leshchenko; A. Akhtari-Zavareh; T. Kasama; M. Aagesen; V. G. Dubrovskii; R. R. LaPierre

doi:10.1021/acs.nanolett.7b00794

Three-fold Symmetric Doping Mechanism in GaAs Nanowires

M. H. T. Dastjerdi, Elisabetta Maria Fiordaliso, E. D. Leshchenko, A. Akhtari-Zavareh, T. Kasama, M. Aagesen, V. G. Dubrovskii, R. R. LaPierre

Faststoffysik

22 Citationer (Scopus)

Originalsprog	Engelsk
Tidsskrift	Nano Letters
Vol/bind	17
Udgave nummer	10
Sider (fra-til)	5875-5882
ISSN	1530-6984
DOI	https://doi.org/10.1021/acs.nanolett.7b00794
Status	Udgivet - 11 okt. 2017

Adgang til dokumentet

10.1021/acs.nanolett.7b00794

acs.nanolettForlagets udgivne version, 3,93 MB

Citationsformater

@article{fd2b57bac119444db88a27acc13511d8,

title = "Three-fold Symmetric Doping Mechanism in GaAs Nanowires",

keywords = "GaAs, gallium arsenide, nanowires, self-assisted, molecular beam epitaxy, doping, beryllium",

author = "Dastjerdi, {M. H. T.} and Fiordaliso, {Elisabetta Maria} and Leshchenko, {E. D.} and A. Akhtari-Zavareh and T. Kasama and M. Aagesen and Dubrovskii, {V. G.} and LaPierre, {R. R.}",

note = "[Qdev]",

year = "2017",

month = oct,

day = "11",

doi = "10.1021/acs.nanolett.7b00794",

language = "English",

volume = "17",

pages = "5875--5882",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Three-fold Symmetric Doping Mechanism in GaAs Nanowires

AU - Dastjerdi, M. H. T.

AU - Fiordaliso, Elisabetta Maria

AU - Leshchenko, E. D.

AU - Akhtari-Zavareh, A.

AU - Kasama, T.

AU - Aagesen, M.

AU - Dubrovskii, V. G.

AU - LaPierre, R. R.

N1 - [Qdev]

PY - 2017/10/11

Y1 - 2017/10/11

KW - GaAs

KW - gallium arsenide

KW - nanowires

KW - self-assisted

KW - molecular beam epitaxy

KW - doping

KW - beryllium

U2 - 10.1021/acs.nanolett.7b00794

DO - 10.1021/acs.nanolett.7b00794

M3 - Journal article

C2 - 28903563

SN - 1530-6984

VL - 17

SP - 5875

EP - 5882

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Three-fold Symmetric Doping Mechanism in GaAs Nanowires

Adgang til dokumentet

Fingeraftryk

Citationsformater