Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Y.Z. Chen*, Nicolas Emile Bovet, Takeshi Kasama, W.W. Gao, Sadegh Yazdi, C. Ma, Nini Pryds, Søren Linderoth

*Corresponding author af dette arbejde
48 Citationer (Scopus)

Abstract

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V-1 s-1 are achieved at this novel oxide interface.

OriginalsprogEngelsk
TidsskriftAdvanced Materials
Vol/bind26
Udgave nummer9
Sider (fra-til)1462-1467
Antal sider6
ISSN0935-9648
DOI
StatusUdgivet - 2014

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