Photoresponsive and gas sensing field-effect transistors based on multilayer WS2 nanoflakes

Nengjie Huo; Shengxue Yang; Zhongming Wei; Shu-Shen Li; Jian-Bai Xia; Jingbo Li

doi:10.1038/srep05209

Photoresponsive and gas sensing field-effect transistors based on multilayer WS₂ nanoflakes

Nengjie Huo, Shengxue Yang, Zhongming Wei, Shu-Shen Li, Jian-Bai Xia, Jingbo Li

Kemisk Institut

289 Citationer (Scopus)

Abstract

The photoelectrical properties of multilayer WS 2 nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm²/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (R) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS 2 nanoflakes and the physical-adsorbed gas molecules, greatly influencing the photoelectrical properties of our devices. The ethanol and NH 3 molecules can serve as electron donors to enhance the R and EQE significantly. Under the NH 3 atmosphere, the maximum R and EQE can even reach 884 A/W and 1.7 × 10 5 %, respectively. This work demonstrates that multilayer WS 2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS 2-based optoelectronics.

Originalsprog	Udefineret/Ukendt
Artikelnummer	5209
Tidsskrift	Scientific Reports
Vol/bind	4
Antal sider	9
ISSN	2045-2322
DOI	https://doi.org/10.1038/srep05209
Status	Udgivet - 9 jun. 2014

Adgang til dokumentet

10.1038/srep05209

Citationsformater

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abstract = "The photoelectrical properties of multilayer WS 2 nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm2/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (R) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS 2 nanoflakes and the physical-adsorbed gas molecules, greatly influencing the photoelectrical properties of our devices. The ethanol and NH 3 molecules can serve as electron donors to enhance the R and EQE significantly. Under the NH 3 atmosphere, the maximum R and EQE can even reach 884 A/W and 1.7 × 10 5 %, respectively. This work demonstrates that multilayer WS 2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS 2-based optoelectronics.",

author = "Nengjie Huo and Shengxue Yang and Zhongming Wei and Shu-Shen Li and Jian-Bai Xia and Jingbo Li",

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T1 - Photoresponsive and gas sensing field-effect transistors based on multilayer WS2 nanoflakes

AU - Huo, Nengjie

AU - Yang, Shengxue

AU - Wei, Zhongming

AU - Li, Shu-Shen

AU - Xia, Jian-Bai

AU - Li, Jingbo

PY - 2014/6/9

Y1 - 2014/6/9

N2 - The photoelectrical properties of multilayer WS 2 nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm2/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (R) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS 2 nanoflakes and the physical-adsorbed gas molecules, greatly influencing the photoelectrical properties of our devices. The ethanol and NH 3 molecules can serve as electron donors to enhance the R and EQE significantly. Under the NH 3 atmosphere, the maximum R and EQE can even reach 884 A/W and 1.7 × 10 5 %, respectively. This work demonstrates that multilayer WS 2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS 2-based optoelectronics.

AB - The photoelectrical properties of multilayer WS 2 nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm2/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (R) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. In addition, charge transfer can appear between the multilayer WS 2 nanoflakes and the physical-adsorbed gas molecules, greatly influencing the photoelectrical properties of our devices. The ethanol and NH 3 molecules can serve as electron donors to enhance the R and EQE significantly. Under the NH 3 atmosphere, the maximum R and EQE can even reach 884 A/W and 1.7 × 10 5 %, respectively. This work demonstrates that multilayer WS 2 nanoflakes possess important potential for applications in field-effect transistors, highly sensitive photodetectors, and gas sensors, and it will open new way to develop two-dimensional (2D) WS 2-based optoelectronics.

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