In-situ mechanical characterization of wurtzite InAs nanowires

R. Erdélyi; Morten Hannibal Madsen; G. Sáfrán; Z. Hajnal; Lukás István Endre; G. Fülöp; S. Csonka; Jesper Nygård; J. Volk

In-situ mechanical characterization of wurtzite InAs nanowires

R. Erdélyi, Morten Hannibal Madsen, G. Sáfrán, Z. Hajnal, Lukás István Endre, G. Fülöp, S. Csonka, Jesper Nygård, J. Volk

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7 Citationer (Scopus)

Abstract

High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the 〈1120〉 crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q>1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.

Originalsprog	Engelsk
Tidsskrift	Solid State Communications
Vol/bind	152
Udgave nummer	9
Sider (fra-til)	1829-1833
ISSN	0038-1098
Status	Udgivet - okt. 2012

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http://dx.doi.org/10.1016/j.ssc.2012.07.005

Citationsformater

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title = "In-situ mechanical characterization of wurtzite InAs nanowires",

abstract = "High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the 〈1120〉 crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q>1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.",

author = "R. Erd{\'e}lyi and Madsen, {Morten Hannibal} and G. S{\'a}fr{\'a}n and Z. Hajnal and {Istv{\'a}n Endre}, Luk{\'a}s and G. F{\"u}l{\"o}p and S. Csonka and Jesper Nyg{\aa}rd and J. Volk",

year = "2012",

month = oct,

language = "English",

volume = "152",

pages = "1829--1833",

journal = "Solid State Communications",

issn = "0038-1098",

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TY - JOUR

T1 - In-situ mechanical characterization of wurtzite InAs nanowires

AU - Erdélyi, R.

AU - Madsen, Morten Hannibal

AU - Sáfrán, G.

AU - Hajnal, Z.

AU - István Endre, Lukás

AU - Fülöp, G.

AU - Csonka, S.

AU - Nygård, Jesper

AU - Volk, J.

PY - 2012/10

Y1 - 2012/10

N2 - High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the 〈1120〉 crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q>1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.

AB - High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the 〈1120〉 crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q>1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.

M3 - Journal article

SN - 0038-1098

VL - 152

SP - 1829

EP - 1833

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

In-situ mechanical characterization of wurtzite InAs nanowires

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