Fabry-Perot Interferometry with Fractional Charges

TY - JOUR

T1 - Fabry-Perot Interferometry with Fractional Charges

AU - McClure, D.T.

AU - Chang, W.

AU - Marcus, Charles M.

AU - Pfeiffer, L.N.

AU - West, K.W.

PY - 2012/6/19

Y1 - 2012/6/19

N2 - Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3, and 5/3 in the constrictions are compared to those near integer quantum Hall (IQH) filling factors in the same devices and at the same gate voltages. Two-dimensional plots of resistance versus gate voltage and magnetic field indicate that all oscillations are Coulomb dominated. A charging-model analysis of gate-voltage periods yields an effective tunneling charge e * e/3 for all FQH states and e * e for IQH states. Temperature decay of the oscillations appears exponential, qualitatively consistent with a recent prediction, and the surprising filling-factor dependence of the associated energy scale may shed light on edge structure.

AB - Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3, and 5/3 in the constrictions are compared to those near integer quantum Hall (IQH) filling factors in the same devices and at the same gate voltages. Two-dimensional plots of resistance versus gate voltage and magnetic field indicate that all oscillations are Coulomb dominated. A charging-model analysis of gate-voltage periods yields an effective tunneling charge e * e/3 for all FQH states and e * e for IQH states. Temperature decay of the oscillations appears exponential, qualitatively consistent with a recent prediction, and the surprising filling-factor dependence of the associated energy scale may shed light on edge structure.

U2 - 10.1103/PhysRevLett.108.256804

DO - 10.1103/PhysRevLett.108.256804

M3 - Journal article

C2 - 23004633

SN - 0031-9007

VL - 108

SP - 256804

JO - Physical Review Letters

JF - Physical Review Letters

IS - 25

ER -