A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

Yongjie Hu, Hugh Churchill, David Reilly, Jie Xiang, Charles Lieber, Charles M. Marcus

256 Citationer (Scopus)
586 Downloads (Pure)

Abstract

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.
OriginalsprogEngelsk
TidsskriftNature Nanotechnology
Vol/bind2
Sider (fra-til)622-625
ISSN1748-3387
DOI
StatusUdgivet - 15 jun. 2007

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